DETECTOR
COMPONENTS
Si
- Ge
- InGaAs - ex
InGaAs - InAs - InSb
- PbS - PbSe - HgCdTe
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The
EOS detector component product line consists of photodiodes and photoconductors
of a variety of different starting materials, giving the broadest selection
from one
source in the industry. EOS offers several standard sizes in most
detector types,
and offers custom design service for non-standard requirements.
Please consult factory if you need technical support for your application.
The products can be generally broken down into three wavelengths regions
plus a
specialty category that includes Position Sensors, 2-Color Detectors,
and Quadrants.
UV - VIS / NIR includes InGaAs, ex-InGaAs, Germanium,
and Silicon photodiodes
that cover progressively from 0.2 to 2.6 microns.
NIR - MWIR includes InAs and InSb photodiodes as well
as PbS, PbSe,
and HgCdTe photoconductors that cover the 1 to 5.5 micron spectral
range.
LWIR
includes HgCdTe photoconductors and specialized pyroelectric
and thermopile
detectors that are used to cover the 1 to 40+ micron spectral range. |
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UV
- VIS/NIR
200
nm - 2.5 microns Components
in this category are Silicon,
Germanium,
InGaAs,
extended-InGaAs, and photodiodes that cover progressively from 0.2 to 2.6 microns.
These detectors operate at room temperature or with TE-Coolers
and are
housed in a variety of TO-Style packages.
Several standard diameters are
available as well as specialty devices such as
Si & InGaAs Quadrants,
2-color detectors, multi-element detectors and PSDs.
Click here for part numbers
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| NIR
- MWIR
1.0
- 5.5microns Detectors
included in this category are InAs
and InSb photodiodes as well
as PbS, PbSe and HgCdTe photoconductors that
cover the 1 to 5.5 micron
spectral range. Room temperature, TE-Cooled and
Cryogenic packages
are utilized, depending on sensitivity requirements.
A variety of standard
and custom sizes are available.
Click
here for part numbers | _____________________________________________________________
| LWIR
2
- 40 microns Detectors
included in this category are HgCdTe
Photoconductors and
specialized Pyroelectric and Thermopile detectors that
are used to cover
the 1 to 40+ micron spectral range.
A variety of standard
sizes and custom geometries are available.
Click
here for part numbers | _____________________________________________________________
| QUADRANT
DETECTORS
To
expand the line of position sensing devices, EOS has added several quadrant
detectors to our standard product line. These are high performance devices
and come in room temperature or TE-Cooled TO-Style packages.
The Quadrants
have been added to the line of position sensing products including
Silicon
for the UV-VIS and InGaAs for 1 - 1.7 µm.
Applications
include laser beam steering and tracking.
Click here for part numbers / Click here for Operating Notes
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NIR
POSITION SENSORS
The
G-series Germanium and IGA-series InGaAs Position Sensors are a
family of
lateral effect photodiodes sensitive in the near-IR region of the
spectrum
- from 800nm to 1700nm. They offer continuous position sensing
capability
over a selection of active sizes and are available as components
or as integrated
photodiode/preamplifier subassemblies.
Click
here for part numbers | ____________________________________________________________
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2
- COLOR DETECTORS
EOS
manufactures two-color detector components, each with a different
spectral
response, mounted in a sandwitch style configuration.
This geometry has its'
top photodetector with normal operating characteristics.
However, it also
acts as a long wavepass spectral filter over the bottom detector.
Click here for part numbers |
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